IRLI610ATU - onsemi

Tube Through Hole N-Channel MOSFET (Metal Oxide) Mosfet Transistor 3.3A Tc 3.1W Ta 33W Tc 200V -55C~150C TJ

Technical Details

Case/Package TO-262-3
Continuous Drain Current (ID) 3.3A
Current Rating 3.3A
Drain to Source Breakdown Voltage 200V
Drain to Source Resistance 1.5Ω
Drain to Source Voltage (Vdss) 200V
Export Control Classification Number (ECCN) Code EAR99
Element Configuration Single
Fall Time 6ns
Gate to Source Voltage (Vgs) 20V
Input Capacitance 240pF
Introduction Date 1999-01-01
Lead Free Lead Free
Lifecycle Status Obsolete
Max Operating Temperature 150°C
Max Power Dissipation 33W
Min Breakdown Voltage 200V
Min Operating Temperature -55°C
Mount Through Hole
Number of Elements 1
Number of Pins 3
Number of Terminals 3
Rds On Max 1.5Ω
REACH SVHC No
Rise Time 9ns
RoHS Compliant
Turn-Off Delay Time 20ns
Voltage Rating (DC) 200V

Compliance

   RoHS : Unconfirmed
   REACH SVHC : No

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onsemi IRLI610ATU | Rochester Electronics

Rochester Electronics

Lifecycle Status Indicator

   Obsolete

Alternatives (Possible Substitutes)

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