J112 - onsemi
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-92
Technical Details
| Breakdown Voltage | -35V |
| Case/Package | TO-92 |
| China RoHS | Compliant |
| Continuous Drain Current (ID) | 5mA |
| Country of Origin | Mainland China |
| Current | 5A |
| Current Rating | 50mA |
| Drain to Source Resistance | 50Ω |
| Drain to Source Voltage (Vdss) | 35V |
| Export Control Classification Number (ECCN) Code | EAR99 |
| Element Configuration | Single |
| Gate to Source Voltage (Vgs) | -35V |
| Height | 5.33mm |
| Harmonized Tariff Schedule (HTS) Code | 8541.21.00.95 |
| Introduction Date | 1987-01-01 |
| Lead Free | Lead Free |
| Length | 5.2mm |
| Lifecycle Status | Production |
| Manufacturer Lifecycle Status | ACTIVE |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 400mW |
| Min Operating Temperature | -65°C |
| Mount | Through Hole |
| Number of Elements | 1 |
| Number of Pins | 3 |
| Number of Terminals | 3 |
| Packaging | Box |
| Power Dissipation | 350mW |
| Radiation Hardening | No |
| REACH SVHC | Yes |
| RoHS | Compliant |
| Voltage | 35V |
| Voltage Rating (DC) | 35V |
| Weight | 200.998119mg |
| Width | 4.19mm |
Compliance
RoHS : Unconfirmed
Radiation Hardening : No
REACH SVHC : Yes
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