KSP13TA - onsemi

Small Signal Bipolar Transistor, 0.5A I(C), 1-Element, NPN, Silicon, TO-92

Technical Details

Case/Package TO-92-3
China RoHS Compliant
Collector Base Voltage (VCBO) 30V
Collector Emitter Breakdown Voltage 30V
Collector Emitter Saturation Voltage 1.5V
Collector Emitter Voltage (VCEO) 30V
Contact Plating Tin
Current Rating 500mA
Export Control Classification Number (ECCN) Code EAR99
Element Configuration Single
Emitter Base Voltage (VEBO) 10V
Gain Bandwidth Product 125MHz
Height 8.77mm
hFE Min 10000
Harmonized Tariff Schedule (HTS) Code 8541.21.00.95
Introduction Date 1999-01-01
Lead Free Lead Free
Lifecycle Status Production
Manufacturer Lifecycle Status ACTIVE
Max Breakdown Voltage 30V
Max Collector Current 500mA
Max Junction Temperature (Tj) 150°C
Max Operating Temperature 150°C
Max Power Dissipation 625mW
Min Operating Temperature -55°C
Mount Through Hole
Number of Elements 1
Number of Pins 3
Number of Terminals 3
Polarity NPN
Power Dissipation 625mW
Radiation Hardening No
REACH SVHC Yes
RoHS Compliant
Schedule B 8541210080, 8541210080|8541210080|8541210080|8541210080|8541210080
Transition Frequency 125MHz
Voltage Rating (DC) 30V
Weight 240mg

Compliance

   RoHS : Unconfirmed
   Radiation Hardening : No
   REACH SVHC : Yes

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onsemi KSP13TA | Rochester Electronics

Rochester Electronics

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