MJD122TF - onsemi

8.0 A, 100 V NPN Darlington Bipolar Power Transistor

Technical Details

Case/Package DPAK
Collector Base Voltage (VCBO) 100V
Collector Emitter Breakdown Voltage 100V
Collector Emitter Saturation Voltage 2V
Collector Emitter Voltage (VCEO) 100V
Country of Origin Mainland China
Current Rating 8A
Export Control Classification Number (ECCN) Code EAR99
Element Configuration Single
Emitter Base Voltage (VEBO) 5V
Height 2.3mm
hFE Min 100
Introduction Date 1999-01-01
Lead Free Lead Free
Length 6.6mm
Lifecycle Status Obsolete
Manufacturer Lifecycle Status OBSOLETE
Max Breakdown Voltage 100V
Max Collector Current 8A
Max Operating Temperature 150°C
Max Power Dissipation 20W
Min Operating Temperature -65°C
Mount Surface Mount
Number of Elements 1
Number of Pins 3
Number of Terminals 2
Polarity NPN
Radiation Hardening No
REACH SVHC No
RoHS Compliant
Voltage Rating (DC) 100V
Weight 260.37mg
Width 6.1mm

Compliance

   RoHS : Unconfirmed
   Radiation Hardening : No
   REACH SVHC : No

Images

Lifecycle Status Indicator

   Obsolete

Alternatives (Possible Substitutes)

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