MJD243G - onsemi
Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin
Technical Details
| Case/Package | DPAK |
| China RoHS | Non-Compliant |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 600mV |
| Collector Emitter Voltage (VCEO) | 100V |
| Country of Origin | Mainland China |
| Current Rating | 4A |
| Export Control Classification Number (ECCN) Code | EAR99 |
| Element Configuration | Single |
| Emitter Base Voltage (VEBO) | 7V |
| Frequency | 40MHz |
| Gain Bandwidth Product | 40MHz |
| Halogen Free | Halogen Free |
| Height | 6.35mm |
| hFE Min | 15 |
| Introduction Date | 1994-05-01 |
| Lead Free | Lead Free |
| Length | 6.35mm |
| Lifecycle Status | Production |
| Manufacturer Lifecycle Status | ACTIVE |
| Max Collector Current | 4A |
| Max Frequency | 40MHz |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 13W |
| Min Operating Temperature | -65°C |
| Number of Elements | 1 |
| Number of Pins | 3 |
| Number of Terminals | 2 |
| Polarity | NPN |
| Power Dissipation | 1.4W |
| Radiation Hardening | No |
| REACH SVHC | No |
| RoHS | Compliant |
| Schedule B | 8541290080 |
| Transition Frequency | 40MHz |
| Voltage Rating (DC) | 100V |
| Weight | 4.535924g |
| Width | 6.35mm |
Compliance
RoHS : Unconfirmed
Radiation Hardening : No
REACH SVHC : No
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