Discrete Semiconductors > Transistors > BJTs

MJD243T4G - onsemi

Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin

Technical Details

Case/Package	DPAK
China RoHS	Non-Compliant
Collector Base Voltage (VCBO)	100V
Collector Emitter Breakdown Voltage	100V
Collector Emitter Saturation Voltage	600mV
Collector Emitter Voltage (VCEO)	100V
Contact Plating	Tin
Current Rating	4A
Element Configuration	Single
Emitter Base Voltage (VEBO)	7V
Frequency	40MHz
Gain Bandwidth Product	40MHz
Halogen Free	Halogen Free
Height	2.38mm
hFE Min	15
Lead Free	Lead Free
Length	6.73mm
Lifecycle Status	Production
Manufacturer Lifecycle Status	ACTIVE
Max Breakdown Voltage	100V
Max Collector Current	4A
Max Frequency	10MHz
Max Operating Temperature	150°C
Max Power Dissipation	12.5W
Min Operating Temperature	-65°C
Number of Elements	1
Number of Pins	3
Number of Terminals	2
Packaging	Tape and Reel
Polarity	NPN
Power Dissipation	1.4W
Radiation Hardening	No
REACH SVHC	No
RoHS	Compliant
Schedule B	8541290080
Transition Frequency	40MHz
Voltage Rating (DC)	100V
Width	6.22mm

Compliance

RoHS : Unconfirmed

Radiation Hardening : No

REACH SVHC : No

Images

onsemi MJD243T4G | Future Electronics

Future Electronics

Datasheets

Lifecycle Status Indicator

Production

Symbol

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Footprint

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Alternatives (Possible Substitutes)

Manufacturer	Manufacturer Part No.	Lifecycle Status Indicator	Confidence
onsemi	MJD243T4	Obsolete
onsemi	MJD243	Obsolete
onsemi	MJD243G	Production
onsemi	MJD148T4	Obsolete
STMicroelectronics	BULD1101ET4	Obsolete
Central Semiconductor	CJD44H11	Obsolete
onsemi	NSV1C301ET4G	Production
onsemi	2SD1803S-TL-H	Obsolete
onsemi	2SD1803T-TL-E	Obsolete
onsemi	2SD1803T-TL-H	Production

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RS

DE: 3450

$

0.2305

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element14 APAC

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Non-Authorized Distributors

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Microchip USA

US: 2674

$

7.2772

7.2546

Win Source

231538-MJD243T4G

CN: 5000

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