MMBFJ175LT3G - onsemi
Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-236
Technical Details
| Case/Package | TO-236-3 |
| China RoHS | Compliant |
| Drain to Source Resistance | 125Ω |
| Element Configuration | Single |
| Gate to Source Voltage (Vgs) | 25V |
| Halogen Free | Halogen Free |
| Height | 1.11mm |
| Input Capacitance | 11pF |
| Lead Free | Lead Free |
| Lifecycle Status | Production |
| Manufacturer Lifecycle Status | ACTIVE |
| Max Junction Temperature (Tj) | 150°C |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 225mW |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Number of Pins | 3 |
| Number of Terminals | 3 |
| Packaging | Tape & Reel (TR) |
| Power Dissipation | 225mW |
| REACH SVHC | Yes |
| RoHS | Compliant |
Compliance
RoHS : Unconfirmed
REACH SVHC : Yes
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