MMBFJ201 - onsemi
Transistor: N-JFET; unipolar; -40V; 200µA; 0.35W; -55+150 st.C; SMD; SOT23
Technical Details
| Breakdown Voltage | -40V |
| Case/Package | SOT-23 |
| China RoHS | Compliant |
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 1mA |
| Current Rating | 50mA |
| Drain to Source Voltage (Vdss) | 40V |
| Element Configuration | Single |
| Gate to Source Voltage (Vgs) | -40V |
| Height | 1.2mm |
| Lead Free | Lead Free |
| Length | 2.92mm |
| Lifecycle Status | Production |
| Manufacturer Lifecycle Status | ACTIVE |
| Max Junction Temperature (Tj) | 150°C |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 350mW |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Number of Pins | 3 |
| Number of Terminals | 3 |
| Power Dissipation | 350mW |
| Radiation Hardening | No |
| REACH SVHC | Yes |
| RoHS | Compliant |
| Schedule B | 8541210080, 8541210080|8541210080|8541210080|8541210080|8541210080 |
| Voltage Rating (DC) | 40V |
| Weight | 30mg |
| Width | 1.3mm |
Compliance
RoHS : Unconfirmed
Radiation Hardening : No
REACH SVHC : Yes
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