MMBFJ310LT1G - onsemi
MMBFJ310LT1G N-channel JFET Transistor; 25 V; Idss 24 to 60mA; 3-Pin SOT-23
Technical Details
| Breakdown Voltage | 25V |
| Case/Package | SOT-23-3 |
| China RoHS | Compliant |
| Continuous Drain Current (ID) | 60mA |
| Country of Origin | Mainland China |
| Current Rating | 60mA |
| Drain to Source Voltage (Vdss) | 25V |
| Export Control Classification Number (ECCN) Code | EAR99 |
| Element Configuration | Single |
| Gate to Source Voltage (Vgs) | 25V |
| Halogen Free | Halogen Free |
| Height | 940µm |
| Introduction Date | 1994-05-01 |
| Lead Free | Lead Free |
| Length | 2.9mm |
| Lifecycle Status | Production |
| Manufacturer Lifecycle Status | ACTIVE |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 225mW |
| Min Breakdown Voltage | 25V |
| Min Operating Temperature | -55°C |
| Number of Elements | 1 |
| Number of Pins | 3 |
| Number of Terminals | 3 |
| Packaging | Tape and Reel |
| Power Dissipation | 225mW |
| Radiation Hardening | No |
| REACH SVHC | Yes |
| RoHS | Compliant |
| Schedule B | 8541210080, 8541210080|8541210080|8541210080|8541210080|8541210080 |
| Voltage Rating | 25V |
| Voltage Rating (DC) | 25V |
| Weight | 1.437803g |
| Width | 1.3mm |
Compliance
RoHS : Unconfirmed
Radiation Hardening : No
REACH SVHC : Yes
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