MSD42SWT1G - onsemi
Small Signal Bipolar Transistor, 0.15A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon
Technical Details
| Case/Package | SC |
| China RoHS | Compliant |
| Collector Base Voltage (VCBO) | 300V |
| Collector Emitter Breakdown Voltage | 300V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 300V |
| Country of Origin | Mainland China |
| Current Rating | 150mA |
| Export Control Classification Number (ECCN) Code | EAR99 |
| Element Configuration | Single |
| Emitter Base Voltage (VEBO) | 6V |
| hFE Min | 40 |
| Introduction Date | 2003-05-01 |
| Lead Free | Lead Free |
| Lifecycle Status | Production |
| Manufacturer Lifecycle Status | ACTIVE |
| Max Breakdown Voltage | 300V |
| Max Collector Current | 150mA |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 150mW |
| Min Operating Temperature | -55°C |
| Number of Elements | 1 |
| Number of Pins | 3 |
| Number of Terminals | 3 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 150mW |
| Radiation Hardening | No |
| REACH SVHC | Yes |
| RoHS | Compliant |
| Transition Frequency | 50MHz |
| Voltage Rating (DC) | 300V |
Compliance
RoHS : Unconfirmed
Radiation Hardening : No
REACH SVHC : Yes
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Rochester Electronics
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