NJVMJD122T4G - onsemi

Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin

Technical Details

Case/Package DPAK
China RoHS Non-Compliant
Collector Base Voltage (VCBO) 100V
Collector Emitter Breakdown Voltage 100V
Collector Emitter Saturation Voltage 2V
Collector Emitter Voltage (VCEO) 100V
Element Configuration Single
Emitter Base Voltage (VEBO) 5V
Halogen Free Halogen Free
Height 2.38mm
hFE Min 100
Lead Free Lead Free
Length 6.73mm
Lifecycle Status Production
Manufacturer Lifecycle Status ACTIVE
Max Breakdown Voltage 100V
Max Collector Current 8A
Max Operating Temperature 150°C
Max Power Dissipation 20W
Min Operating Temperature -65°C
Number of Elements 1
Number of Pins 3
Number of Terminals 2
Packaging Tape and Reel
Polarity NPN
Radiation Hardening No
REACH SVHC No
RoHS Compliant
Transition Frequency 4MHz
Width 6.22mm

Compliance

   RoHS : Unconfirmed
   Radiation Hardening : No
   REACH SVHC : No

Images

onsemi NJVMJD122T4G | Future Electronics

Future Electronics

Lifecycle Status Indicator

   Production
Symbol
Footprint

Alternatives (Possible Substitutes)

Manufacturer Manufacturer Part No. Lifecycle Status Indicator Confidence
Central Semiconductor Obsolete
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onsemi Obsolete
onsemi Production
onsemi Obsolete
onsemi Obsolete
onsemi Production
onsemi Obsolete
onsemi Obsolete
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