NJVMJD31CG - onsemi

3.0 A, 100 V NPN Bipolar Power Transistor

Technical Details

Case/Package DPAK
China RoHS Non-Compliant
Collector Base Voltage (VCBO) 100V
Collector Emitter Breakdown Voltage 100V
Collector Emitter Saturation Voltage 1.2V
Collector Emitter Voltage (VCEO) 100V
Continuous Collector Current 3A
Element Configuration Single
Emitter Base Voltage (VEBO) 5V
Gain Bandwidth Product 3MHz
Height 2.51mm
hFE Min 10
Lead Free Lead Free
Lifecycle Status Production
Manufacturer Lifecycle Status ACTIVE
Max Collector Current 3A
Max Junction Temperature (Tj) 150°C
Max Operating Temperature 150°C
Max Power Dissipation 1.56W
Min Operating Temperature -65°C
Mount Surface Mount
Number of Elements 1
Number of Pins 3
Number of Terminals 2
Polarity NPN
Power Dissipation 1.56W
Radiation Hardening No
REACH SVHC No
RoHS Compliant
Schedule B 8541290080, 8541290080|8541290080, 8541290080|8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080
Transition Frequency 3MHz

Compliance

   RoHS : Unconfirmed
   Radiation Hardening : No
   REACH SVHC : No

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Lifecycle Status Indicator

   Production
Symbol
Footprint

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