NJW21193G - onsemi

Bipolar Power Transistors, Complementary, 16 A, 250 V PNP

Technical Details

Case/Package TO-220-3
China RoHS Non-Compliant
Collector Base Voltage (VCBO) 400V
Collector Emitter Breakdown Voltage 350V
Collector Emitter Saturation Voltage 4V
Collector Emitter Voltage (VCEO) 250V
Element Configuration Single
Emitter Base Voltage (VEBO) 5V
Frequency 4MHz
Gain Bandwidth Product 4MHz
Height 20.1mm
hFE Min 8
Lead Free Lead Free
Length 15.8mm
Lifecycle Status Production
Manufacturer Lifecycle Status ACTIVE
Max Breakdown Voltage 250V
Max Collector Current 16A
Max Frequency 4MHz
Max Operating Temperature 150°C
Max Power Dissipation 200W
Min Operating Temperature -65°C
Number of Elements 1
Number of Pins 3
Number of Terminals 3
Polarity PNP
Power Dissipation 200mW
Radiation Hardening No
REACH SVHC No
RoHS Compliant
Schedule B 8541210080
Transition Frequency 4MHz
Width 5mm

Compliance

   RoHS : Unconfirmed
   Radiation Hardening : No
   REACH SVHC : No

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onsemi NJW21193G | Master Electronics

Master Electronics

Lifecycle Status Indicator

   Production
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