NTD6415ANLT4G - onsemi
NTD6415ANL: Power MOSFET 100V 23A 56 mohm Single N-Channel DPAK Logic Level
Technical Details
| Case/Package | DPAK |
| China RoHS | Non-Compliant |
| Continuous Drain Current (ID) | 23A |
| Country of Origin | Mainland China, Malaysia |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 56mΩ |
| Drain to Source Voltage (Vdss) | 100V |
| Export Control Classification Number (ECCN) Code | EAR99 |
| Element Configuration | Single |
| Fall Time | 71ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.38mm |
| Input Capacitance | 1.024nF |
| Introduction Date | 2010-03-26 |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Lifecycle Status | Production |
| Manufacturer Lifecycle Status | ACTIVE |
| Max Operating Temperature | 175°C |
| Max Power Dissipation | 83W |
| Min Breakdown Voltage | 100V |
| Min Operating Temperature | -55°C |
| Number of Elements | 1 |
| Number of Pins | 4 |
| Number of Terminals | 2 |
| Packaging | Tape and Reel |
| Power Dissipation | 83W |
| Radiation Hardening | No |
| Rds On Max | 52mΩ |
| REACH SVHC | No |
| Rise Time | 91ns |
| RoHS | Compliant |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 11ns |
| Width | 6.22mm |
Compliance
RoHS : Unconfirmed
Radiation Hardening : No
REACH SVHC : No
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Farnell
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