NTJD4158CT1G - onsemi
NTJD4158C: Small Signal MOSFET 30V 880mA 260 mOhm Dual Complementary SC-88/SC70-6/SOT-363
Technical Details
| Case/Package | SOT-363-6 |
| China RoHS | Compliant |
| Continuous Drain Current (ID) | 250mA |
| Country of Origin | Mainland China |
| Current Rating | 250mA |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 2.5Ω |
| Export Control Classification Number (ECCN) Code | EAR99 |
| Element Configuration | Dual |
| Fall Time | 3.5ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1mm |
| Input Capacitance | 33pF |
| Introduction Date | 2005-12-13 |
| Lead Free | Lead Free |
| Length | 2.2mm |
| Lifecycle Status | Production |
| Manufacturer Lifecycle Status | ACTIVE |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 270mW |
| Min Breakdown Voltage | 30V |
| Min Operating Temperature | -55°C |
| Number of Elements | 2 |
| Number of Pins | 6 |
| Number of Terminals | 6 |
| Packaging | Tape and Reel |
| Power Dissipation | 270mW |
| Radiation Hardening | No |
| Rds On Max | 1.5Ω |
| REACH SVHC | Yes |
| Resistance | 1.5Ω |
| Rise Time | 6.5ns |
| RoHS | Compliant |
| Schedule B | 8541210080, 8541210080|8541210080|8541210080|8541210080|8541210080 |
| Threshold Voltage | 1.2V |
| Turn-Off Delay Time | 13.5ns |
| Turn-On Delay Time | 15ns |
| Width | 1.35mm |
Compliance
RoHS : Unconfirmed
Radiation Hardening : No
REACH SVHC : Yes
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