PZT2907AT1G - onsemi
Bipolar (BJT) Single Transistor, General Purpose, PNP, 60 V, 600 mA, 1.5 W, SOT-223, Surface Mount
Technical Details
| Case/Package | SOT-223-4 |
| China RoHS | Compliant |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Saturation Voltage | 1.6V |
| Collector Emitter Voltage (VCEO) | 60V |
| Contact Plating | Tin |
| Country of Origin | Malaysia |
| Current Rating | -600mA |
| Export Control Classification Number (ECCN) Code | EAR99 |
| Element Configuration | Single |
| Emitter Base Voltage (VEBO) | 5V |
| Fall Time | 30ns |
| Frequency | 200MHz |
| Gain Bandwidth Product | 200MHz |
| Height | 1.651mm |
| hFE Min | 50 |
| Introduction Date | 1992-11-01 |
| Lead Free | Lead Free |
| Length | 6.6802mm |
| Lifecycle Status | Production |
| Manufacturer Lifecycle Status | ACTIVE |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 600mA |
| Max Frequency | 200MHz |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 1.5W |
| Min Operating Temperature | -65°C |
| Number of Elements | 1 |
| Number of Pins | 4 |
| Number of Terminals | 4 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 1.5W |
| Radiation Hardening | No |
| REACH SVHC | Yes |
| Rise Time | 40ns |
| RoHS | Compliant |
| Schedule B | 8541290080, 8541290080|8541290080, 8541290080|8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080 |
| Transition Frequency | 200MHz |
| Voltage Rating (DC) | -60V |
| Weight | 4.535924g |
| Width | 3.7084mm |
Compliance
RoHS : Unconfirmed
Radiation Hardening : No
REACH SVHC : Yes
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