SBC807-25LT1G - onsemi

Bipolar (BJT) Single Transistor, PNP, 45 V, 500 mA, 225 mW, SOT-23, Surface Mount

Technical Details

Case/Package SOT-23-3
China RoHS Compliant
Collector Base Voltage (VCBO) -50V
Collector Emitter Breakdown Voltage 45V
Collector Emitter Saturation Voltage 700mV
Collector Emitter Voltage (VCEO) 45V
Country of Origin Mainland China
Export Control Classification Number (ECCN) Code EAR99
Element Configuration Single
Emitter Base Voltage (VEBO) -5V
Gain Bandwidth Product 100MHz
Halogen Free Halogen Free
hFE Min 160
Introduction Date 1999-01-01
Lead Free Lead Free
Lifecycle Status Production
Manufacturer Lifecycle Status ACTIVE
Max Breakdown Voltage 45V
Max Collector Current 500mA
Max Operating Temperature 150°C
Max Power Dissipation 300mW
Min Operating Temperature -55°C
Number of Elements 1
Number of Pins 3
Number of Terminals 3
Packaging Tape and Reel
Polarity PNP
Radiation Hardening No
REACH SVHC Yes
RoHS Compliant
Schedule B 8541210080, 8541210080|8541210080, 8541210080|8541210080|8541210080, 8541210080|8541210080|8541210080|8541210080
Transition Frequency 100MHz

Compliance

   RoHS : Unconfirmed
   Radiation Hardening : No
   REACH SVHC : Yes

Images

onsemi SBC807-25LT1G | Farnell

Farnell

Lifecycle Status Indicator

   Production
Symbol
Footprint

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