SMBT3904DW1T1G - onsemi
on Semi SMBT3904DW1T1G Dual NPN Bipolar Transistor, 0.2 A, 40 V, 6-PIN SOT-363
Technical Details
| Case/Package | SOT-363-6 |
| China RoHS | Compliant |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 300mV |
| Collector Emitter Voltage (VCEO) | 40V |
| Element Configuration | Dual |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 300MHz |
| Gain Bandwidth Product | 300MHz |
| Height | 1mm |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Length | 2.2mm |
| Lifecycle Status | Production |
| Manufacturer Lifecycle Status | ACTIVE |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 200mA |
| Max Frequency | 300MHz |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 150mW |
| Min Operating Temperature | -55°C |
| Number of Elements | 2 |
| Number of Pins | 6 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 150mW |
| Radiation Hardening | No |
| REACH SVHC | Yes |
| RoHS | Compliant |
| Schedule B | 8541210080|8541210080|8541210080|8541210080|8541210080, 8541290080 |
| Transition Frequency | 300MHz |
| Width | 1.35mm |
Compliance
RoHS : Unconfirmed
Radiation Hardening : No
REACH SVHC : Yes
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