TIP112 - onsemi

Bulk Through Hole NPN - Darlington Single Bipolar (BJT) Transistor 1000 @ 1A 4V 2A 2W 40MHz

Technical Details

Case/Package TO-220-3
China RoHS Non-Compliant
Collector Base Voltage (VCBO) 100V
Collector Emitter Breakdown Voltage 100V
Collector Emitter Saturation Voltage 2.5V
Collector Emitter Voltage (VCEO) 100V
Contact Plating Tin
Continuous Collector Current 2A
Country of Origin Mainland China
Current Rating 2A
Export Control Classification Number (ECCN) Code EAR99
Element Configuration Single
Emitter Base Voltage (VEBO) 5V
Height 12.7mm
hFE Min 500
Introduction Date 1995-07-01
Lead Free Lead Free
Length 12.7mm
Lifecycle Status Obsolete
Max Breakdown Voltage 100V
Max Collector Current 2A
Max Operating Temperature 150°C
Max Power Dissipation 50W
Min Operating Temperature -65°C
Mount Through Hole
Number of Elements 1
Number of Pins 3
Number of Terminals 3
Packaging Bulk
Polarity NPN
Power Dissipation 50W
Radiation Hardening No
REACH SVHC No
RoHS Compliant
Transition Frequency 25MHz
Voltage Rating (DC) 100V
Weight 1.214g
Width 12.7mm

Compliance

   RoHS : Unconfirmed
   Radiation Hardening : No
   REACH SVHC : No

Images

onsemi TIP112 | Onlinecomponents.com

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Lifecycle Status Indicator

   Obsolete
Symbol
Footprint

Alternatives (Possible Substitutes)

Manufacturer Manufacturer Part No. Lifecycle Status Indicator Confidence
Bourns Obsolete
STMicroelectronics Production
Central Semiconductor Obsolete
Texas Instruments Unknown
onsemi Production
MCC Obsolete
STMicroelectronics Obsolete
Texas Instruments Unknown
onsemi Obsolete
onsemi Obsolete

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