Technical Details
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Dark Current | 100nA |
| Fall Time | 20µs |
| Forward Current | 50mA |
| Lifecycle Status | Production |
| Max Breakdown Voltage | 30V |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -40°C |
| Mount | Through Hole |
| Number of Circuits | 1 |
| Number of Elements | 1 |
| Number of Pins | 4 |
| Output Configuration | Phototransistor |
| Packaging | Bulk |
| Power Dissipation | 100mW |
| Radiation Hardening | No |
| REACH SVHC | Yes |
| Response Time | 12µs |
| Reverse Breakdown Voltage | 2V |
| Rise Time | 20µs |
| RoHS | Compliant |
| Schedule B | 8541408000, 8541408000|8541408000|8541408000|8541408000|8541408000 |
| Sensing Distance | 2.54mm |
| Touchscreen | Infrared (IR) |
| Wavelength | 890nm |
Compliance
RoHS : Unconfirmed
Radiation Hardening : No
REACH SVHC : Yes
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