PDTC123JT215 - NXP Semiconductors

TRANS PREBIAS NPN 250MW TO236AB

Technical Details

Case/Package TO-236-3
Collector Emitter Breakdown Voltage 50V
Collector Emitter Saturation Voltage 100mV
Collector Emitter Voltage (VCEO) 50V
Collector-emitter Voltage-Max 100mV
Emitter Base Voltage (VEBO) 10V
Height 1mm
Lead Free Lead Free
Length 3mm
Max Breakdown Voltage 50V
Max Collector Current 100mA
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Max Output Current 100mA
Max Power Dissipation 250mW
Mount Surface Mount
Number of Pins 3
Operating Supply Voltage 50V
Package Quantity 3000
Packaging Cut Tape
Polarity NPN
Radiation Hardening No
Reach SVHC Compliant No
Width 1.4mm

Compliance

   RoHS : Compliant
   Radiation Hardening : No

Images

NXP Semiconductors PDTC123JT215 | Rs

Rs

NXP Semiconductors PDTC123JT215 | Element14

Element14

NXP Semiconductors PDTC123JT215 | Digikey

Digikey

Lifecycle Status Indicator

   Volume Production
 Loading indicators

Alternatives (Possible Substitutes)

Manufacturer Manufacturer Part No. Lifecycle Status Indicator Confidence
NXP Semiconductors Obsolete
NXP Semiconductors Volume Production
Diodes Volume Production
ON Semiconductor / Fairchild Obsolete
Rohm Volume Production
Diodes Volume Production
NXP Semiconductors Volume Production
NXP Semiconductors Volume Production
ON Semiconductor Volume Production
ON Semiconductor / Fairchild Obsolete

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