PDTD123ET,215 - NXP Semiconductors
BRT TRANSISTOR, NPN, 50V, 500MA, 2.2KOHM / 2.2KOHM, 3-SOT-23 - More Details
Technical Details
| Case/Package | TO-236AB |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 300mV |
| Emitter Base Voltage (VEBO) | 10V |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 250mW |
| Mount | Surface Mount |
| Number of Pins | 3 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 250mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
Compliance
RoHS : Compliant
Radiation Hardening : No
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