PESD3V3S2UT215 - NXP Semiconductors

TVS DIODE 3.3VWM 20VC SOT23

Technical Details

Breakdown Voltage 5.2V
Capacitance 300pF
Case/Package TO-236AB
Clamping Voltage-Max 20V
Diode Type ZENER
Direction Unidirectional
ESD Protection Yes
Height 1mm
Lead Free Lead Free
Length 3mm
Max Breakdown Voltage 6V
Min Breakdown Voltage 5.2V
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Max Power Dissipation 330W
Max Reverse Leakage Current 2uA
Mount Surface Mount
Number of Channels 2
Number of Pins 3
Number of Unidirectional Channels 2
Package Quantity 1
Packaging Tape and Reel
Peak Pulse Current 18A
Peak Pulse Power 330W
Power Line Protection No
Reach SVHC Compliant No
Reverse Standoff Voltage 3.3V
RoHS Compliant Yes
Test Current 5mA
Width 1.4mm

Compliance

   RoHS : Compliant

Images

NXP Semiconductors PESD3V3S2UT215 | Newark

Newark

NXP Semiconductors PESD3V3S2UT215 | Rs

Rs

NXP Semiconductors PESD3V3S2UT215 | Digikey

Digikey

Lifecycle Status Indicator

   Volume Production
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