PH1825AL,115 - NXP Semiconductors
Power Field-Effect Transistor, 100A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Technical Details
| Case/Package | SOT-669 |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Breakdown Voltage | 25V |
| Drain to Source Resistance | 1.8mΩ |
| Drain to Source Voltage (Vdss) | 25V |
| Export Control Classification Number (ECCN) Code | EAR99 |
| Element Configuration | Single |
| Fall Time | 29ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 4.3nF |
| Introduction Date | 2009-04-23 |
| Lifecycle Status | Obsolete |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 104W |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Number of Pins | 5 |
| Packaging | Tape & Reel (TR) |
| Power Dissipation | 104W |
| Radiation Hardening | No |
| Rds On Max | 1.8mΩ |
| Rise Time | 72ns |
| RoHS | Compliant |
| Turn-Off Delay Time | 54ns |
| Turn-On Delay Time | 47ns |
Compliance
RoHS : Unconfirmed
Radiation Hardening : No
Images
Alternatives (Possible Substitutes)
| Manufacturer | Manufacturer Part No. | Lifecycle Status Indicator | Confidence |
|---|---|---|---|
| Nexperia | Production | ||
| Nexperia | Production | ||
| Nexperia | Production | ||
| Nexperia | Production | ||
| NXP Semiconductors | Obsolete | ||
| NXP Semiconductors | Obsolete | ||
| NXP Semiconductors | Obsolete | ||
| NXP Semiconductors | Obsolete | ||
| NXP Semiconductors | Obsolete | ||
| NXP Semiconductors | Obsolete |
Notice
We're sorry. Your current subscription doesn't support online BOM analysis. Please sign up for a free SmartParts Analysis trial and check it out.
Registered user only