PMBTA06.215 - NXP Semiconductors

TRANS NPN 80V 0.5A TO236AB

Technical Details

Case/Package TO-236AB
Collector Base Voltage (VCBO) 80V
Collector Emitter Breakdown Voltage 80V
Collector Emitter Saturation Voltage 250mV
Collector Emitter Voltage (VCEO) 80V
Collector-emitter Voltage-Max 250mV
Contact Plating Tin, Matte
Emitter Base Voltage (VEBO) 4V
Height 1mm
Lead Free Lead Free
Length 3mm
Max Breakdown Voltage 80V
Max Collector Current 500mA
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Max Power Dissipation 250mW
Mount Surface Mount
Number of Pins 3
Package Quantity 1
Packaging Cut Tape
Polarity NPN
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 100MHz
Width 1.4mm

Compliance

   RoHS : Compliant
   Radiation Hardening : No

Images

NXP Semiconductors PMBTA06.215 | Digikey

Digikey

NXP Semiconductors PMBTA06.215 | Element14

Element14

NXP Semiconductors PMBTA06.215 | Rs

Rs

Lifecycle Status Indicator

   Volume Production
Symbol
Footprint

Alternatives (Possible Substitutes)

Manufacturer Manufacturer Part No. Lifecycle Status Indicator Confidence
MCC Volume Production
Diodes Volume Production
ON Semiconductor Volume Production
Rohm Not Recommended for New Design
ON Semiconductor / Fairchild Obsolete
ON Semiconductor Volume Production
Infineon Not Recommended for New Design
Infineon Not Recommended for New Design
Rohm Volume Production
STMicroelectronics Not Recommended for New Design

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