PSMN012-60YS,115 - Nexperia
Power Field-Effect Transistor, 59A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Technical Details
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 59A |
| Country of Origin | Philippines |
| Drain to Source Resistance | 11.1mΩ |
| Drain to Source Voltage (Vdss) | 60V |
| Export Control Classification Number (ECCN) Code | EAR99 |
| Introduction Date | 2010-01-05 |
| Lifecycle Status | Production |
| Manufacturer Lifecycle Status | RELEASED FOR SUPPLY |
| Max Operating Temperature | 175°C |
| Max Power Dissipation | 89W |
| Min Breakdown Voltage | 60V |
| Number of Elements | 1 |
| Number of Pins | 4 |
| Number of Terminals | 4 |
| Packaging | Tape & Reel |
| REACH SVHC | No |
| RoHS | Compliant |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
Compliance
RoHS : Unconfirmed
REACH SVHC : No
Images
TME
Alternatives (Possible Substitutes)
| Manufacturer | Manufacturer Part No. | Lifecycle Status Indicator | Confidence |
|---|---|---|---|
| NXP Semiconductors | Obsolete | ||
| Nexperia | Production | ||
| Nexperia | Production | ||
| Nexperia | Production | ||
| Nexperia | Production | ||
| Nexperia | Obsolete | ||
| Nexperia | Obsolete | ||
| Nexperia | EOL | ||
| Nexperia | Production | ||
| Nexperia | Production |
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