PUMT1115 - NXP Semiconductors
NXP PUMT1,115 Dual PNP Bipolar Transistor, 0.1 A, 40 V, 6-Pin UMT
Technical Details
| Case/Package | TSSOP |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 200mV |
| Collector-emitter Voltage-Max | 200mV |
| Emitter Base Voltage (VEBO) | 5V |
| Height | 1mm |
| Lead Free | Lead Free |
| Length | 2.2mm |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 100mA |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Number of Pins | 6 |
| Package Quantity | 3000 |
| Packaging | Cut Tape |
| Polarity | PNP |
| Radiation Hardening | No |
| Transition Frequency | 100MHz |
| Width | 1.35mm |
Compliance
RoHS : Compliant
Radiation Hardening : No
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