RFP12P08 - Fairchild Semiconductor
Power Field-Effect Transistor, 12A I(D), 80V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,...
Technical Details
| Case/Package | TO-220AB |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Breakdown Voltage | -80V |
| Drain to Source Resistance | 300mΩ |
| Export Control Classification Number (ECCN) Code | EAR99 |
| Element Configuration | Single |
| Fall Time | 94ns |
| Gate to Source Voltage (Vgs) | 20V |
| Introduction Date | 2000-03-01 |
| Lifecycle Status | Obsolete |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 75W |
| Min Breakdown Voltage | 80V |
| Min Operating Temperature | -55°C |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Power Dissipation | 75W |
| Rise Time | 90ns |
| RoHS | Non-Compliant |
| Turn-Off Delay Time | 144ns |
Compliance
RoHS : Unconfirmed
Images
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