RFP4N06 - Intersil
Power Field-Effect Transistor, 4A I(D), 60V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,...
Technical Details
| Continuous Drain Current (ID) | 4A |
| Drain to Source Resistance | 800mΩ |
| Export Control Classification Number (ECCN) Code | EAR99 |
| Harmonized Tariff Schedule (HTS) Code | 8541.29.00.95 |
| Introduction Date | 1986-04-01 |
| Lifecycle Status | Obsolete |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 25W |
| Min Breakdown Voltage | 60V |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Power Dissipation | 25W |
| REACH SVHC | No |
| RoHS | Non-Compliant |
Compliance
RoHS : Unconfirmed
REACH SVHC : No
Images
Rochester Electronics
Authorized Distributors
| Distributor | SKU | Stock | USD | 1 | 10 | 50 | 100 | 1000 | 10000 | Buy |
|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics |
US: 1079
|
$ | 0.3831 | 0.318 | 0.2835 | |||||
Non-Authorized Distributors
Notice
We're sorry. Your current subscription doesn't support online BOM analysis. Please sign up for a free SmartParts Analysis trial and check it out.
Registered user only