BC848BWT106 - ROHM
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon
Technical Details
| Case/Package | TO-236-3 |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 600mV |
| Collector Emitter Voltage (VCEO) | 30V |
| Contact Plating | Copper, Silver, Tin |
| Continuous Collector Current | 100mA |
| Current Rating | 100mA |
| Element Configuration | Single |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 200MHz |
| hFE Min | 200 |
| Lead Free | Lead Free |
| Lifecycle Status | Production |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 350mW |
| Min Operating Temperature | -65°C |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Number of Pins | 3 |
| Number of Terminals | 3 |
| Polarity | NPN |
| Radiation Hardening | No |
| REACH SVHC | Yes |
| RoHS | Compliant |
| Transition Frequency | 200MHz |
| Voltage Rating (DC) | 30V |
Compliance
RoHS : Unconfirmed
Radiation Hardening : No
REACH SVHC : Yes
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