SSH6N80 - Samsung
Power Field-Effect Transistor, 6A I(D), 800V, 1.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Technical Details
| Continuous Drain Current (ID) | 6A |
| Drain to Source Resistance | 1.9Ω |
| Lifecycle Status | Obsolete |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 170W |
| Min Breakdown Voltage | 800V |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| RoHS | Non-Compliant |
Compliance
RoHS : Unconfirmed
Images
Alternatives (Possible Substitutes)
| Manufacturer | Manufacturer Part No. | Lifecycle Status Indicator | Confidence |
|---|---|---|---|
| Vishay | Obsolete | ||
| STMicroelectronics | Obsolete | ||
| Vishay | Obsolete | ||
| Fuji Electric | Unknown | ||
| Fuji Electric | Obsolete | ||
| Infineon | Obsolete | ||
| NXP Semiconductors | Obsolete | ||
| onsemi | Obsolete | ||
| Infineon | Obsolete | ||
| Fairchild Semiconductor | Obsolete |
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