SG2003J - Microchip

TRANS 7NPN DARL 50V 0.5A 16DIP Bipolar (BJT) Transistor Array 7 NPN Darlington 50V 500mA Through Hole 16-CDIP

Technical Details

Projected EOL Date 2044-01-27
Case/Package CDIP
Collector Emitter Breakdown Voltage 50V
Collector Emitter Saturation Voltage 1.6V
Collector Emitter Voltage (VCEO) 50V
Country of Assembly Thailand
Country of Fabrication United States of America
Country of Origin THA
Export Control Classification Number (ECCN) Code EAR99
Harmonized Tariff Schedule (HTS) Code 8542.39.0060
Lead Free Contains Lead
Lifecycle Status Production
Manufacturer Lifecycle Status REL
Max Breakdown Voltage 50V
Max Collector Current 500mA
Max Operating Temperature 125°C
Min Operating Temperature -55°C
Mount Through Hole
Number of Elements 7
Output Current 100A
Output Voltage 95V
Polarity NPN
Radiation Hardening No
RoHS Compliant

Compliance

   RoHS : Unconfirmed
   Radiation Hardening : No

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Lifecycle Status Indicator

   Production
Symbol
Footprint

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