Technical Details
| Collector Emitter Breakdown Voltage | 35V |
| Collector Emitter Voltage (VCEO) | 400mV |
| Dark Current | 100nA |
| Fall Time | 20µs |
| Forward Current | 50mA |
| Introduction Date | 2013-11-28 |
| Lifecycle Status | Production |
| Max Operating Temperature | 95°C |
| Min Operating Temperature | -30°C |
| Mount | Snap-In |
| Number of Circuits | 1 |
| Number of Elements | 1 |
| Number of Pins | 3 |
| Operating Supply Current | 500µA |
| Output Configuration | Phototransistor |
| Radiation Hardening | No |
| REACH SVHC | Yes |
| Response Time | 15µs |
| Rise Time | 15µs |
| RoHS | Compliant |
| Sensing Distance | 5mm |
Compliance
RoHS : Unconfirmed
Radiation Hardening : No
REACH SVHC : Yes
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