Technical Details
| Case/Package | SMD/SMT |
| Collector Emitter Breakdown Voltage | 35V |
| Collector Emitter Voltage (VCEO) | 35V |
| Contact Plating | Copper, Tin |
| Dark Current | 100nA |
| Fall Time | 150µs |
| Forward Current | 30mA |
| Introduction Date | 2006-03-29 |
| Lead Free | Lead Free |
| Lifecycle Status | Obsolete |
| Max Collector Current | 20mA |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -25°C |
| Mount | Surface Mount |
| Number of Circuits | 1 |
| Number of Elements | 1 |
| Number of Pins | 4 |
| Output Configuration | Phototransistor |
| Power Dissipation | 100mW |
| Radiation Hardening | No |
| REACH SVHC | Yes |
| Response Time | 50µs |
| Reverse Breakdown Voltage | 6V |
| Rise Time | 150µs |
| RoHS | Compliant |
| Sensing Distance | 1.0922mm |
| Wavelength | 930nm |
Compliance
RoHS : Unconfirmed
Radiation Hardening : No
REACH SVHC : Yes
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