Technical Details
| Case/Package | SMD/SMT |
| China RoHS | Compliant |
| Collector Emitter Breakdown Voltage | 35V |
| Collector Emitter Voltage (VCEO) | 35V |
| Contact Plating | Gold |
| Dark Current | 100nA |
| Fall Time | 20µs |
| Forward Current | 50mA |
| Forward Voltage | 1.2V |
| Height | 2.3mm |
| Input Current | 20mA |
| Isolation Voltage | 5000Vrms |
| Lead Free | Lead Free |
| Lifecycle Status | Production |
| Max Breakdown Voltage | 35V |
| Max Collector Current | 20mA |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -25°C |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Number of Pins | 4 |
| Output Type | Phototransistor |
| Output Voltage | 35V |
| Packaging | Cut Tape |
| Power Dissipation | 100mW |
| Radiation Hardening | No |
| REACH SVHC | Yes |
| Response Time | 20µs |
| Reverse Breakdown Voltage | 6V |
| Reverse Voltage | 6V |
| Reverse Voltage (DC) | 6V |
| Rise Time | 20µs |
| RoHS | Compliant |
| Sensing Distance | 3mm |
| Wavelength | 950nm |
| Width | 4mm |
Compliance
RoHS : Unconfirmed
Radiation Hardening : No
REACH SVHC : Yes
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