SI1330EDL-T1-E3 - Vishay Siliconix

MOSFET N-CH 60V 240MA SOT323-3

Technical Details

Case/Package SOT-323-3
Continuous Drain Current (ID) 240mA
Drain to Source Resistance 2.5R
Drain to Source Voltage (Vdss) 60V
Drain-source On Resistance-Max 2.5R
Fall Time 4.8ns
Gate to Source Voltage (Vgs) 20V
Height 1mm
Lead Free Lead Free
Length 2mm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 280mW
Mount Surface Mount
Number of Channels 1
Number of Pins 3
Package Quantity 1
Packaging Tape and Reel
Polarity N-CHANNEL
Radiation Hardening No
Rds On Max 2.5R
Reach SVHC Compliant No
Rise Time 4.8ns
RoHS Compliant Yes
Series TrenchFET®
Threshold Voltage 2V
Turn-Off Delay Time 12.8ns
Turn-On Delay Time 3.8ns
Weight 0.004395oz
Width 1.25mm

Compliance

   RoHS : Compliant
   Radiation Hardening : No

Images

Vishay Siliconix SI1330EDL-T1-E3 | Mouser

Mouser

Vishay Siliconix SI1330EDL-T1-E3 | Farnell

Farnell

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