SI4650DY-T1-E3 - Vishay Siliconix

MOSFET 2N-CH 30V 8A 8-SOIC

Technical Details

Case/Package SOIC
Continuous Drain Current (ID) 7.8A
Drain to Source Resistance 18mR
Drain to Source Voltage (Vdss) 30V
Fall Time 34ns
FET Type 2 N-Channel
Gate to Source Voltage (Vgs) 20V
Height 1.5mm
Input Capacitance 1.55nF
Length 5mm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 3.1W
Mount Surface Mount
Number of Channels 2
Number of Pins 8
Package Quantity 1
Packaging Tape and Reel
Polarity N-CHANNEL
Radiation Hardening No
Rds On Max 18mR
Rise Time 130ns
RoHS Compliant Yes
Series TrenchFET®
Turn-Off Delay Time 19ns
Turn-On Delay Time 32ns
Weight 0.006596oz
Width 4mm

Compliance

   RoHS : Compliant
   Radiation Hardening : No

Images

Vishay Siliconix SI4650DY-T1-E3 | Arrow Electronics

Arrow Electronics

Vishay Siliconix SI4650DY-T1-E3 | Digikey

Digikey

Lifecycle Status Indicator

   Obsolete

Alternatives (Possible Substitutes)

Manufacturer Manufacturer Part No. Lifecycle Status Indicator Confidence
Vishay Siliconix Not Recommended for New Design
Vishay Siliconix Volume Production

Associate Distributors

Distributor
SKU
Stock
USD
1
10
50
100
1000
10000
Buy
Component Stockers USA
US: 735
$ 99.99 99.99 99.99 99.99 99.99 99.99
 Historical Pricing  Historical Stock Levels
Quantity
Location
Esaler Electronic
HK: 2,000
$
 Historical Pricing  Historical Stock Levels
Quantity
Location

Registered user only