SI4904DY-T1-GE3 - Vishay Siliconix

MOSFET 2N-CH 40V 8A 8-SOIC

Technical Details

Case/Package SO
Continuous Drain Current (ID) 8A
Drain to Source Resistance 16mR
Drain to Source Voltage (Vdss) 40V
Fall Time 19ns
FET Type 2 N-Channel
Gate to Source Voltage (Vgs) 16V
Height 1.5mm
Input Capacitance 2.39nF
Length 5mm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 2W
Mount Surface Mount
Number of Channels 2
Number of Pins 8
Package Quantity 2500
Packaging Tape and Reel
Polarity N-CHANNEL
Radiation Hardening No
Rds On Max 16mR
Reach SVHC Compliant No
Rise Time 117ns
RoHS Compliant Yes
Series TrenchFET®
Threshold Voltage 2V
Turn-Off Delay Time 62ns
Turn-On Delay Time 88ns
Weight 0.006596oz
Width 4mm

Compliance

   RoHS : Compliant
   Radiation Hardening : No

Images

Vishay Siliconix SI4904DY-T1-GE3 | Mouser

Mouser

Vishay Siliconix SI4904DY-T1-GE3 | Element14

Element14

Vishay Siliconix SI4904DY-T1-GE3 | Farnell

Farnell

Vishay Siliconix SI4904DY-T1-GE3 | Digikey

Digikey

Lifecycle Status Indicator

   Not Recommended for New Design

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