SI4944DY-T1-E3 - Vishay Siliconix

MOSFET 2N-CH 30V 9.3A 8-SOIC

Technical Details

Case/Package SOIC
Continuous Drain Current (ID) 9.3A
Current 75A
Drain to Source Breakdown Voltage 30V
Drain to Source Resistance 9.5mR
Drain to Source Voltage (Vdss) 30V
Drain-source On Resistance-Max 9.5mR
Fall Time 10ns
FET Type 2 N-Channel
Gate to Source Voltage (Vgs) 20V
Lead Free Lead Free
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 1.3W
Mount Surface Mount
Nominal Vgs 3V
Number of Pins 8
Package Quantity 1
Packaging Tape and Reel
Polarity N-CHANNEL
Power Dissipation 1.3W
Radiation Hardening No
Rds On Max 9.5mR
Reach SVHC Compliant Unknown
Rise Time 10ns
RoHS Compliant Yes
Series TrenchFET®
Threshold Voltage 3V
Turn-Off Delay Time 40ns
Turn-On Delay Time 10ns
Voltage 30V

Compliance

   RoHS : Compliant
   Radiation Hardening : No

Images

Vishay Siliconix SI4944DY-T1-E3 | Arrow Electronics

Arrow Electronics

Vishay Siliconix SI4944DY-T1-E3 | Newark

Newark

Vishay Siliconix SI4944DY-T1-E3 | Mouser

Mouser

Vishay Siliconix SI4944DY-T1-E3 | Digikey

Digikey

Lifecycle Status Indicator

   Obsolete
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