SI5933CDC-T1-GE3 - Vishay Siliconix

MOSFET 2P-CH 20V 3.7A 1206-8

Technical Details

Case/Package SMD/SMT
Continuous Drain Current (ID) 2.5A
Drain to Source Resistance 144mR
Drain to Source Voltage (Vdss) 20V
Drain-source On Resistance-Max 144mR
Fall Time 8ns
Gate to Source Voltage (Vgs) 8V
Input Capacitance 276pF
Lead Free Lead Free
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 2.8W
Mount Surface Mount
Number of Channels 2
Number of Pins 8
Package Quantity 1
Packaging Tape and Reel
Polarity P-CHANNEL
Radiation Hardening No
Rds On Max 144mR
Reach SVHC Compliant No
Rise Time 34ns
RoHS Compliant Yes
Series TrenchFET®
Threshold Voltage -1V
Turn-Off Delay Time 22ns
Turn-On Delay Time 1ns
Weight 0.002998oz

Compliance

   RoHS : Compliant
   Radiation Hardening : No

Images

Vishay Siliconix SI5933CDC-T1-GE3 | Mouser

Mouser

Vishay Siliconix SI5933CDC-T1-GE3 | Digikey

Digikey

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