SI7872DP-T1-GE3 - Vishay Siliconix

MOSFET 30V 10A 3.5W 22mohm @ 10V

Technical Details

Case/Package SOIC
Continuous Drain Current (ID) 6.4A
Drain to Source Resistance 22mR
Drain to Source Voltage (Vdss) 30V
Fall Time 9ns
FET Type 2 N-Channel
Gate to Source Voltage (Vgs) 12V
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 1.4W
Mount Surface Mount
Number of Channels 2
Package Quantity 1
Packaging Tape and Reel
Polarity N-CHANNEL
Radiation Hardening No
Rds On Max 22mR
Rise Time 10ns
RoHS Compliant Yes
Series LITTLE FOOT®
Turn-On Delay Time 9ns
Weight 0.01787oz

Compliance

   RoHS : Compliant
   Radiation Hardening : No

Images

Vishay Siliconix SI7872DP-T1-GE3 | Arrow Electronics

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Vishay Siliconix SI7872DP-T1-GE3 | Mouser

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