SI7923DN-T1-E3 - Vishay Siliconix

MOSFET 2P-CH 30V 4.3A 1212-8

Technical Details

Continuous Drain Current (ID) 4.3A
Drain to Source Resistance 47mR
Drain to Source Voltage (Vdss) -30V
Drain-source On Resistance-Max 47mR
Fall Time 12ns
Gate to Source Voltage (Vgs) 20V
Height 1.04mm
Lead Free Lead Free
Length 3.05mm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 1.3W
Mount Surface Mount
Number of Channels 2
Number of Pins 8
Package Quantity 3000
Packaging Tape and Reel
Polarity P-CHANNEL
Radiation Hardening No
Rds On Max 47mR
Reach SVHC Compliant Unknown
Rise Time 12ns
RoHS Compliant Yes
Series TrenchFET®
Threshold Voltage -3V
Turn-Off Delay Time 38ns
Turn-On Delay Time 10ns
Width 3.05mm

Compliance

   RoHS : Compliant
   Radiation Hardening : No

Images

Vishay Siliconix SI7923DN-T1-E3 | Arrow Electronics

Arrow Electronics

Vishay Siliconix SI7923DN-T1-E3 | Future Electronics

Future Electronics

Vishay Siliconix SI7923DN-T1-E3 | Mouser

Mouser

Vishay Siliconix SI7923DN-T1-E3 | Digikey

Digikey

Vishay Siliconix SI7923DN-T1-E3 | Element14

Element14

Lifecycle Status Indicator

   Volume Production
 Loading indicators

Alternatives (Possible Substitutes)

Manufacturer Manufacturer Part No. Lifecycle Status Indicator Confidence
Vishay Siliconix Volume Production

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