SI7949DP-T1-E3 - Vishay Siliconix

MOSFET 2P-CH 60V 3.2A PPAK SO-8

Technical Details

Case/Package SOIC
Continuous Drain Current (ID) 3.2A
Drain to Source Resistance 64mR
Drain to Source Voltage (Vdss) -60V
Drain-source On Resistance-Max 64mR
Fall Time 9ns
Gate to Source Voltage (Vgs) 20V
Height 1.04mm
Lead Free Lead Free
Length 4.9mm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 1.5W
Mount Surface Mount
Number of Channels 2
Number of Elements 2
Number of Pins 8
Package Quantity 3000
Packaging Tape and Reel
Polarity P-CHANNEL
Power Dissipation 1.5W
Radiation Hardening No
Rds On Max 64mR
Reach SVHC Compliant No
Rise Time 9ns
RoHS Compliant Yes
Series TrenchFET®
Threshold Voltage -3V
Turn-Off Delay Time 65ns
Turn-On Delay Time 8ns
Weight 0.01787oz
Width 5.89mm

Compliance

   RoHS : Compliant
   Radiation Hardening : No

Images

Vishay Siliconix SI7949DP-T1-E3 | Mouser

Mouser

Vishay Siliconix SI7949DP-T1-E3 | Newark

Newark

Vishay Siliconix SI7949DP-T1-E3 | Future Electronics

Future Electronics

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