SI8402DB-T1-E1 - Vishay
20-V N-channel 1.8-V (g-s) Mosfet | Siliconix / Vishay SI8402DB-T1-E1
Technical Details
| China RoHS | Compliant |
| Continuous Drain Current (ID) | 5.3A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 43mΩ |
| Drain to Source Voltage (Vdss) | 20V |
| Export Control Classification Number (ECCN) Code | EAR99 |
| Element Configuration | Single |
| Fall Time | 145ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 355.6µm |
| Introduction Date | 2003-12-10 |
| Lead Free | Lead Free |
| Length | 1.5748mm |
| Lifecycle Status | Obsolete |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 2.77W |
| Min Breakdown Voltage | 20V |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Number of Pins | 4 |
| Number of Terminals | 4 |
| Power Dissipation | 1.47W |
| Radiation Hardening | No |
| Rds On Max | 37mΩ |
| REACH SVHC | Yes |
| Resistance | 37MΩ |
| Rise Time | 145ns |
| RoHS | Compliant |
| Turn-Off Delay Time | 45ns |
| Turn-On Delay Time | 30ns |
| Width | 1.6002mm |
Compliance
RoHS : Unconfirmed
Radiation Hardening : No
REACH SVHC : Yes
Images
Authorized Distributors
| Distributor | SKU | Stock | USD | 1 | 10 | 50 | 100 | 1000 | 10000 | Buy |
|---|---|---|---|---|---|---|---|---|---|---|
| Farnell |
GB: 0
|
$ | 0.7757 | |||||||
Non-Authorized Distributors
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