SI8812DB-T2-E1 - Vishay

Si8812DB Series 20 V 0.059 Ohm SMT N-Channel MOSFET - MICRO FOOT

Technical Details

Continuous Drain Current (ID) 3.2A
Drain to Source Resistance 65mΩ
Drain to Source Voltage (Vdss) 20V
Element Configuration Single
Gate to Source Voltage (Vgs) 8V
Lead Free Lead Free
Lifecycle Status Production
Max Operating Temperature 150°C
Max Power Dissipation 500mW
Min Breakdown Voltage 20V
Min Operating Temperature -55°C
Mount Surface Mount
Number of Channels 1
Number of Elements 1
Number of Pins 4
Number of Terminals 4
Power Dissipation 900mW
Rds On Max 59mΩ
REACH SVHC Yes
RoHS Compliant

Compliance

   RoHS : Unconfirmed
   REACH SVHC : Yes

Images

Vishay SI8812DB-T2-E1 | Future Electronics

Future Electronics

Lifecycle Status Indicator

   Production

Alternatives (Possible Substitutes)

Manufacturer Manufacturer Part No. Lifecycle Status Indicator Confidence
Vishay Obsolete
Vishay Obsolete
onsemi Obsolete
onsemi Obsolete
onsemi Obsolete
onsemi Obsolete
onsemi Obsolete
onsemi Obsolete
onsemi Obsolete
onsemi Obsolete

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