SIA950DJ-T1-GE3 - Vishay Siliconix

MOSFET 2N-CH 190V 0.95A SC-70-6

Technical Details

Continuous Drain Current (ID) 470mA
Drain to Source Resistance 3R
Drain to Source Voltage (Vdss) 190V
Fall Time 15ns
FET Type 2 N-Channel
Gate to Source Voltage (Vgs) 16V
Input Capacitance 90pF
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 7W
Mount Surface Mount
Package Quantity 1
Packaging Tape and Reel
Polarity N-CHANNEL
Radiation Hardening No
Rds On Max 3.8R
Rise Time 15ns
RoHS Compliant Yes
Series LITTLE FOOT®
Turn-Off Delay Time 25ns
Turn-On Delay Time 10ns

Compliance

   RoHS : Compliant
   Radiation Hardening : No

Images

Vishay Siliconix SIA950DJ-T1-GE3 | Mouser

Mouser

Vishay Siliconix SIA950DJ-T1-GE3 | Arrow Electronics

Arrow Electronics

Vishay Siliconix SIA950DJ-T1-GE3 | Digikey

Digikey

Lifecycle Status Indicator

   Obsolete
 Loading indicators

Alternatives (Possible Substitutes)

Manufacturer Manufacturer Part No. Lifecycle Status Indicator Confidence
Vishay Siliconix Volume Production

Associate Distributors

Distributor
SKU
Stock
USD
1
10
50
100
1000
10000
Buy
Esaler Electronic
HK: 4,500
$
 Historical Pricing  Historical Stock Levels
Quantity
Location
Sourcengine
US: 218
$
 Historical Pricing  Historical Stock Levels
Quantity
Location

Registered user only