2N3767 - Solitron Devices
Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 Pin
Technical Details
| Body Material | Metal |
| Collector Emitter Saturation Voltage | 2.5V |
| Collector Emitter Voltage (VCEO) | 80V |
| hFE Min | 40 |
| Max Collector Current | 1A |
| Max Operating Temperature | 175°C |
| Max Power Dissipation | 20W |
| Number of Elements | 1 |
| Number of Terminals | 2 |
| Power Dissipation | 20W |
| RoHS | Non-Compliant |
| Transition Frequency | 10MHz |
Compliance
RoHS : Unconfirmed
Images
Notice
We're sorry. Your current subscription doesn't support online BOM analysis. Please sign up for a free SmartParts Analysis trial and check it out.
Registered user only