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Solitron Devices - 2N5157

2N5157 - Solitron Devices

Power Bipolar Transistor, 3A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin

 Datasheets

Technical Details

Body Material Metal
Collector Emitter Saturation Voltage 800mV
Collector Emitter Voltage (VCEO) 500V
hFE Min 30
Lifecycle Status Production
Max Collector Current 3A
Max Operating Temperature 140°C
Max Power Dissipation 100W
Number of Elements 1
Number of Terminals 2
Power Dissipation 167W
RoHS Non-Compliant
Transition Frequency 3MHz

Compliance

   RoHS : Unconfirmed

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2N5157
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