STB85NF55LT4 - STMicroelectronics

N-Channel 55 V, 0.006 Ohm typ., 80 A StripFET(TM) II Power MOSFET in D2PAK package

Technical Details

Case/Package D2PAK
China RoHS Non-Compliant
Continuous Drain Current (ID) 80A
Country of Origin Mainland China
Current Rating 80A
Drain to Source Breakdown Voltage 55V
Drain to Source Resistance 10mΩ
Drain to Source Voltage (Vdss) 55V
Export Control Classification Number (ECCN) Code EAR99
Element Configuration Single
Fall Time 55ns
Gate to Source Voltage (Vgs) 15V
Input Capacitance 4.05nF
Introduction Date 1980-01-04
Lead Free Lead Free
Lifecycle Status Production
Max Operating Temperature 175°C
Max Power Dissipation 300W
Min Breakdown Voltage 55V
Min Operating Temperature -55°C
Mount Surface Mount
Number of Elements 1
Number of Pins 3
Number of Terminals 2
Packaging Tape and Reel
Power Dissipation 300W
Radiation Hardening No
Rds On Max 8mΩ
REACH SVHC No
Resistance 8mΩ
Rise Time 165ns
RoHS Compliant
Turn-Off Delay Time 70ns
Turn-On Delay Time 35ns
Voltage Rating (DC) 55V

Compliance

   RoHS : Unconfirmed
   Radiation Hardening : No
   REACH SVHC : No

Images

STMicroelectronics STB85NF55LT4 | Future Electronics

Future Electronics

Lifecycle Status Indicator

   Production

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