Discrete Semiconductors > Transistors > MOSFETs

STB85NF55T4 - STMicroelectronics

STB85NF55T4 N-channel MOSFET Transistor, 80 A, 55 V, 3-Pin D2PAK

Case/Package	D2PAK
China RoHS	Non-Compliant
Continuous Drain Current (ID)	80A
Country of Origin	Mainland China
Current Rating	80A
Drain to Source Breakdown Voltage	55V
Drain to Source Resistance	8mΩ
Drain to Source Voltage (Vdss)	55V
Dual Supply Voltage	55V
Export Control Classification Number (ECCN) Code	EAR99
Element Configuration	Single
Fall Time	35ns
Gate to Source Voltage (Vgs)	20V
Height	4.6mm
Input Capacitance	3.7nF
Introduction Date	1980-01-04
Lead Free	Lead Free
Length	10.4mm
Lifecycle Status	Production
Max Operating Temperature	175°C
Max Power Dissipation	300W
Min Breakdown Voltage	55V
Min Operating Temperature	-55°C
Mount	Surface Mount
Nominal Vgs	3V
Number of Elements	1
Number of Pins	3
Number of Terminals	2
Packaging	Tape and Reel
Power Dissipation	300W
Radiation Hardening	No
Rds On Max	8mΩ
REACH SVHC	No
Rise Time	100ns
RoHS	Compliant
Termination	SMD/SMT
Threshold Voltage	3V
Turn-Off Delay Time	70ns
Turn-On Delay Time	25ns
Voltage Rating (DC)	55V
Width	9.35mm

RoHS : Unconfirmed

Radiation Hardening : No

REACH SVHC : No

Production

Manufacturer	Manufacturer Part No.	Lifecycle Status Indicator
STMicroelectronics	STB85NF55	Production
STMicroelectronics	STB140NF55T4	Production
STMicroelectronics	STB85NF55LT4	Production
Infineon	IPB80N06S209ATMA2	Production
STMicroelectronics	STP85NF55	Obsolete
Infineon	IPP80N06S2L06AKSA1	Obsolete
STMicroelectronics	STP85NF55L	Obsolete
Infineon	SPI80N06S-08	Obsolete
Infineon	IPP80N06S2L06AKSA2	Obsolete
Infineon	IPB80N06S2L06XT	Production